v rrm = 400 v - 600 v i f = 70 a features ? high surge capability do-5 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol mur7040 (r) unit repetitive peak reverse voltage v rrm 400 v rms reverse voltage v rms 280 v mur7040 thru mur7060r maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions 2. reverse polarity (r): stud is anode. silicon super fast recover y diode mur7060 (r) 600 420 ? types from 400 v to 600 v v rrm dc blocking voltage v dc 400 v continuous forward current i f 70 a operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol mur7040 (r) unit diode forward voltage 1.3 25 a 3ma recovery time maximum reverse recovery time t rr 75 ns i f =0.5 a, i r =1.0 a, i rr = 0.25 a v r = 50 v, t j = 125 c v 3 90 a v r = 50 v, t j = 25 c i f = 70 a, t j = 25 c t c 125 c conditions 1000 t c = 25 c, t p = 8.3 ms 25 electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm reverse current i r v f 70 1000 -55 to 150 -55 to 150 1.7 mur7060 (r) 600 www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 1
mur7040 thru mur7060r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mur7040 thru mur7060r do- 5 (do-203ab) j k g f a e d p n b c m inches millimeters min max min max a 1/4 ?28 unf b 0.669 0.687 17.19 17.44 c ----- 0.794 ----- 20.16 d ----- 1.020 ----- 25.91 e 0.422 0.453 10.72 11.50 f 0.115 0.200 2.93 5.08 g ----- 0.460 ----- 11.68 j ----- 0.280 ----- 7.00 k 0.236 ----- 6.00 ----- m ----- 0.589 ----- 14.96 n ----- 0.063 ----- 1.60 p 0.140 0.175 3.56 4.45 www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 3
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